[email protected]

Локаль

Язык

  • English
  • русский

Валюта

  • CNY-¥
  • RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
Классификация Марка Марка О Anli Запрос цены
ANLI Electronic parts stores,electronic components,electronic parts,electronics parts supply
[email protected]

CGHV38375F Технические параметры

Cree  CGHV38375F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - JFETs
Марка Cree
Package / Case 440226
Shipping Restrictions This product may require additional documentation to export from the United States.
RoHS Details
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 125 V
Vgs - Gate-Source Breakdown Voltage - 10 V, 2 V
Id - Continuous Drain Current 24 A
Свойство продукта Значение свойства
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 125 C
Mounting Styles Flange Mount
Factory Pack QuantityFactory Pack Quantity 1
Operating Frequency 2.75 GHz to 3.75 GHz
Output Power 400 W
Transistor Type HEMT
Gain 11 dB
Просмотр сходства
CGHV38375F brand manufacturers: Cree, Anli stock, CGHV38375F reference price.Cree. CGHV38375F parameters, CGHV38375F Datasheet PDF and pin diagram description download.You can use the CGHV38375F Transistors - JFETs, DSP Datesheet PDF, find CGHV38375F pin diagram and circuit diagram and usage method of function,CGHV38375F electronics tutorials.You can download from the Anli.