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CMPA2735030S Технические параметры

Cree  CMPA2735030S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - JFETs
Марка Cree
Package / Case QFN-32
RoHS Details
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 150 V
Vgs - Gate-Source Breakdown Voltage - 10 V, 2 V
Id - Continuous Drain Current 4.6 A
Maximum Drain Gate Voltage -
Minimum Operating Temperature -
Maximum Operating Temperature + 225 C
Свойство продукта Значение свойства
Pd - Power Dissipation 32 W
Mounting Styles SMD/SMT
Moisture Sensitive Yes
Factory Pack QuantityFactory Pack Quantity 50
Vgs th - Gate-Source Threshold Voltage - 3 V
Packaging Cut Tape
Operating Frequency 2.7 GHz to 3.5 GHz
Output Power 40.6 W
Transistor Type HEMT
Gain 28.1 dB
Просмотр сходства
CMPA2735030S brand manufacturers: Cree, Anli stock, CMPA2735030S reference price.Cree. CMPA2735030S parameters, CMPA2735030S Datasheet PDF and pin diagram description download.You can use the CMPA2735030S Transistors - JFETs, DSP Datesheet PDF, find CMPA2735030S pin diagram and circuit diagram and usage method of function,CMPA2735030S electronics tutorials.You can download from the Anli.