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C4D20120D Технические параметры
Cree/Wolfspeed C4D20120D technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Arrays | |
| Марка | ||
| Factory Lead Time | 7 Weeks | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Number of Pins | 3Pins | |
| Packaging | Tube | |
| Series | Z-Rec® | |
| Published | 2014 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Max Operating Temperature | 175°C | |
| Min Operating Temperature | -55°C | |
| Max Power Dissipation | 352W | |
| Element Configuration | Common Cathode | |
| Speed | No Recovery Time > 500mA (Io) | |
| Diode Type | Silicon Carbide Schottky |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Current - Reverse Leakage @ Vr | 200μA @ 1200V | |
| Voltage - Forward (Vf) (Max) @ If | 1.8V @ 10A | |
| Forward Current | 32A | |
| Operating Temperature - Junction | -55°C~175°C | |
| Voltage - DC Reverse (Vr) (Max) | 1200V | |
| Forward Voltage | 1.8V | |
| Max Reverse Voltage (DC) | 1.2kV | |
| Average Rectified Current | 16A | |
| Reverse Recovery Time | 0ns | |
| Peak Reverse Current | 200μA | |
| Max Repetitive Reverse Voltage (Vrrm) | 1.2kV | |
| Peak Non-Repetitive Surge Current | 71A | |
| Diode Configuration | 1 Pair Common Cathode | |
| Max Forward Surge Current (Ifsm) | 71A | |
| REACH SVHC | Unknown | |
| Radiation Hardening | No | |
| RoHS Status | RoHS Compliant |
C4D20120D Документы
- PCN Assembly/OriginMult Devices Rev 25/Jan/2019
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