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Cree/Wolfspeed CCS050M12CM2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - FETs, MOSFETs - Arrays | |
Марка | ||
Factory Lead Time | 19 Weeks | |
Mount | Chassis Mount, Screw | |
Mounting Type | Chassis Mount | |
Package / Case | Module | |
Number of Pins | 28Pins | |
Supplier Device Package | Module | |
Current - Continuous Drain (Id) @ 25℃ | 87A Tc | |
Number of Elements | 6 Elements | |
Turn Off Delay Time | 50 ns | |
Operating Temperature | 150°C TJ | |
Packaging | Bulk | |
Series | Z-FET™ Z-Rec™ | |
Published | 2013 | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Max Operating Temperature | 150°C | |
Min Operating Temperature | -40°C | |
Max Power Dissipation | 337W | |
Number of Channels | 6Channels | |
Power Dissipation | 312W | |
Turn On Delay Time | 21 ns |
Свойство продукта | Значение свойства | |
---|---|---|
Power - Max | 337W | |
FET Type | 6 N-Channel (3-Phase Bridge) | |
Rds On (Max) @ Id, Vgs | 34mOhm @ 50A, 20V | |
Vgs(th) (Max) @ Id | 2.3V @ 2.5mA | |
Input Capacitance (Ciss) (Max) @ Vds | 2.810nF @ 800V | |
Gate Charge (Qg) (Max) @ Vgs | 180nC @ 20V | |
Rise Time | 19ns | |
Drain to Source Voltage (Vdss) | 1200V 1.2kV | |
Fall Time (Typ) | 30 ns | |
Continuous Drain Current (ID) | 87A | |
Threshold Voltage | 2.3V | |
Gate to Source Voltage (Vgs) | 25V | |
Reverse Voltage | 1.2kV | |
Drain to Source Breakdown Voltage | 1.2kV | |
Input Capacitance | 2.81nF | |
Max Junction Temperature (Tj) | 150°C | |
FET Feature | Silicon Carbide (SiC) | |
Drain to Source Resistance | 25mOhm | |
Rds On Max | 34 mΩ | |
Height | 17.5mm | |
REACH SVHC | Unknown | |
Radiation Hardening | No | |
RoHS Status | RoHS Compliant |