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LP29BF35IDT Технические параметры

CTS  LP29BF35IDT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Crystals
Марка CTS
Package / Case TO-251-3
Vds - Drain-Source Breakdown Voltage 600 V
Typical Turn-On Delay Time 7 ns
Vgs th - Gate-Source Threshold Voltage 2 V
Pd - Power Dissipation 2.5 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Voltage - 30 V, + 30 V
Unit Weight 0.011993 oz
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 5040
Mounting Styles Through Hole
Forward Transconductance - Min 0.75 S
Channel Mode Enhancement
Part # Aliases FQU1N60CTU_NL
Manufacturer onsemi
Brand onsemi / Fairchild
Qg - Gate Charge 6.2 nC
Rds On - Drain-Source Resistance 11.5 Ohms
RoHS Details
Свойство продукта Значение свойства
Typical Turn-Off Delay Time 13 ns
Id - Continuous Drain Current 1 A
Series FQU1N60C
Packaging Tube
Tolerance 30 PPM
Type MOSFET
Subcategory MOSFETs
Technology Si
Frequency 29.4912 MHz
Frequency Stability 50 PPM
Termination Style SMD/SMT
Configuration Single
Number of Channels 1 ChannelChannel
Load Capacitance 18 pF
Rise Time 21 ns
Product Type MOSFET
Transistor Type 1 N-Channel
ESR 30 Ohms
Product Category MOSFET
Width 2.5 mm
Height 6.3 mm
Length 6.8 mm
Просмотр сходства
LP29BF35IDT brand manufacturers: CTS, Anli stock, LP29BF35IDT reference price.CTS. LP29BF35IDT parameters, LP29BF35IDT Datasheet PDF and pin diagram description download.You can use the LP29BF35IDT Crystals, DSP Datesheet PDF, find LP29BF35IDT pin diagram and circuit diagram and usage method of function,LP29BF35IDT electronics tutorials.You can download from the Anli.