Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
BC846BWQ-7-F Технические параметры
Diodes BC846BWQ-7-F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | Diodes | |
| Factory Lead Time | 13 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | 4-SMD, No Lead | |
| Surface Mount | YES | |
| Supplier Device Package | SOT-323 | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Transistor Polarity | PNP | |
| Factory Pack QuantityFactory Pack Quantity | 3000 | |
| Manufacturer | Diodes Incorporated | |
| Brand | Diodes Incorporated | |
| RoHS | Details | |
| Package | Tape & Reel (TR) | |
| Current-Collector (Ic) (Max) | 100 mA | |
| Mfr | Diodes Incorporated | |
| Product Status | Active | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Transition Frequency-Nom (fT) | 300 MHz | |
| Manufacturer Part Number | BC846BWQ-7-F | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Risk Rank | 5.51 | |
| Operating Temperature | -20°C ~ 70°C | |
| Series | SiT8209 | |
| Packaging | Tape & Reel (TR) | |
| Size / Dimension | 0.276 L x 0.197 W (7.00mm x 5.00mm) | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| ECCN Code | EAR99 | |
| Type | XO (Standard) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Finish | Matte Tin (Sn) | |
| Additional Feature | HIGH RELIABILITY | |
| Subcategory | Transistors | |
| Technology | Si | |
| Voltage - Supply | 3.3V | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Frequency | 133MHz | |
| Frequency Stability | ±10ppm | |
| Output | LVCMOS, LVTTL | |
| Reference Standard | AEC-Q101 | |
| JESD-30 Code | R-PDSO-G3 | |
| Function | Enable/Disable | |
| Base Resonator | MEMS | |
| Current - Supply (Max) | 36mA | |
| Current - Supply (Disable) (Max) | 31mA | |
| Configuration | SINGLE | |
| Power Dissipation | 5 | |
| Power - Max | 200 mW | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | NPN | |
| Product Type | BJTs - Bipolar Transistors | |
| Transistor Type | NPN | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V | |
| Current - Collector Cutoff (Max) | 20nA (ICBO) | |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA | |
| Voltage - Collector Emitter Breakdown (Max) | 65 V | |
| Transition Frequency | 125 | |
| Frequency - Transition | 300MHz | |
| Power Dissipation-Max (Abs) | 0.2 W | |
| Absolute Pull Range (APR) | -- | |
| Collector Current-Max (IC) | 0.1 A | |
| DC Current Gain-Min (hFE) | 200 | |
| Continuous Collector Current | 3 | |
| Collector-Emitter Voltage-Max | 65 V | |
| Product Category | Bipolar Transistors - BJT | |
| Height Seated (Max) | 0.039 (1.00mm) | |
| Ratings | -- |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ