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BC856BWQ-7 Технические параметры

Diodes  BC856BWQ-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка Diodes
Package / Case Axial, Box
Mounting Type Surface Mount
Mounting Feature Flanges
Supplier Device Package SOT-323
Package Bulk
Current-Collector (Ic) (Max) 100 mA
Base Product Number BC856
Mfr Diodes Incorporated
Product Status Active
Package Type SOT-323
Maximum Collector Emitter Voltage -65 V
Maximum DC Collector Current 200 mA
Factory Pack QuantityFactory Pack Quantity 3000
Manufacturer Diodes Incorporated
Brand Diodes Incorporated
RoHS Details
Operating Temperature -55°C ~ 250°C
Series Military, MIL-PRF-39009, RER70
Packaging Bulk
Свойство продукта Значение свойства
Size / Dimension 1.062 L x 1.080 W (26.97mm x 27.43mm)
Tolerance ±1%
Part Status Active
Temperature Coefficient ±100ppm/°C
Resistance 909 mOhms
Composition Wirewound
Power (Watts) 20W
Failure Rate R (0.01%)
Lead Style Solder Lugs
Power - Max 200 mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V
Current - Collector Cutoff (Max) 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 65 V
Coating, Housing Type Aluminum
Frequency - Transition 200MHz
Features Military, Moisture Resistant
Product Category Diodes Inc.
Height Seated (Max) 0.561 (14.25mm)
Просмотр сходства
BC856BWQ-7 brand manufacturers: Diodes, Anli stock, BC856BWQ-7 reference price.Diodes. BC856BWQ-7 parameters, BC856BWQ-7 Datasheet PDF and pin diagram description download.You can use the BC856BWQ-7 Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BC856BWQ-7 pin diagram and circuit diagram and usage method of function,BC856BWQ-7 electronics tutorials.You can download from the Anli.