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DMN4027SSDQ-13 Технические параметры
Diodes DMN4027SSDQ-13 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | Diodes | |
| Factory Lead Time | 17 Weeks | |
| Mounting Type | Surface | |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) | |
| Surface Mount | YES | |
| Supplier Device Package | 8-SOP | |
| Number of Terminals | 8Terminals | |
| Transistor Element Material | SILICON | |
| Manufacturer Part Number | TSDR6120MA10M-SSAC | |
| Approvals | CE, CSA, UL | |
| Manufacturer | SSAC | |
| Timing Range | 20 | |
| Factory Pack QuantityFactory Pack Quantity | 2500 | |
| Brand | Diodes Incorporated | |
| RoHS | Details | |
| Package | Tape & Reel (TR) | |
| Current - Continuous Drain (Id) @ 25℃ | 5.4A (Ta) | |
| Mfr | Diodes Incorporated | |
| Product Status | Active | |
| Package Description | SMALL OUTLINE, R-PDSO-G8 | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | 30 | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 2 Elements | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Risk Rank | 5.21 | |
| Drain Current-Max (ID) | 5.4 A | |
| Packaging | Reel | |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Series | Automotive, AEC-Q101 | |
| JESD-609 Code | e3 | |
| Termination | 0.250 in Flat Blade | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Additional Feature | HIGH RELIABILITY | |
| Subcategory | MOSFETs | |
| Technology | Si | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| Reference Standard | AEC-Q101 | |
| JESD-30 Code | R-PDSO-G8 | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power - Max | 1.25W (Ta) | |
| FET Type | 2 N-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 7A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250µA | |
| Input Capacitance (Ciss) (Max) @ Vds | 604pF @ 20V | |
| Gate Charge (Qg) (Max) @ Vgs | 12.9nC @ 10V | |
| Drain to Source Voltage (Vdss) | 40V | |
| Polarity/Channel Type | N-CHANNEL | |
| Product Type | MOSFET | |
| Coil Voltage | 230 VAC | |
| Drain Current-Max (Abs) (ID) | 7.1 A | |
| Drain-source On Resistance-Max | 0.027 Ω | |
| DS Breakdown Voltage-Min | 40 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 17.2 W | |
| FET Feature | Standard | |
| Mode of Operation | Repeat Cycle | |
| Product Category | MOSFET |
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