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MMDT2227Q-7-F-52 Технические параметры

Diodes  MMDT2227Q-7-F-52 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка Diodes
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363
Package Bulk
Current-Collector (Ic) (Max) 600mA
Base Product Number MMDT2227
Mfr Diodes Incorporated
Product Status Active
Свойство продукта Значение свойства
Operating Temperature -55°C ~ 150°C (TJ)
Series Automotive, AEC-Q101
Power - Max 200mW
Transistor Type NPN, PNP Complementary
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V
Current - Collector Cutoff (Max) 10nA, 50nA
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA / 1.6V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 40V, 60V
Frequency - Transition 300MHz, 200MHz
Просмотр сходства
MMDT2227Q-7-F-52 brand manufacturers: Diodes, Anli stock, MMDT2227Q-7-F-52 reference price.Diodes. MMDT2227Q-7-F-52 parameters, MMDT2227Q-7-F-52 Datasheet PDF and pin diagram description download.You can use the MMDT2227Q-7-F-52 Transistors - Bipolar (BJT) - Arrays, DSP Datesheet PDF, find MMDT2227Q-7-F-52 pin diagram and circuit diagram and usage method of function,MMDT2227Q-7-F-52 electronics tutorials.You can download from the Anli.