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MMDT3946Q-7R Технические параметры

Diodes  MMDT3946Q-7R technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка Diodes
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363
Package Bulk
Current-Collector (Ic) (Max) 200mA
Base Product Number MMDT3946
Mfr Diodes Incorporated
Product Status Active
Factory Pack QuantityFactory Pack Quantity 3000
Manufacturer Diodes Incorporated
Brand Diodes Incorporated
Emitter- Base Voltage VEBO 6 V, 5 V
Pd - Power Dissipation 200 mW
Transistor Polarity NPN, PNP
Maximum Operating Temperature + 150 C
DC Collector/Base Gain hfe Min 100
Collector-Emitter Saturation Voltage 300 mV
Minimum Operating Temperature - 55 C
Свойство продукта Значение свойства
Mounting Styles SMD/SMT
Gain Bandwidth Product fT 300 MHz
Maximum DC Collector Current 200 mA
Collector- Emitter Voltage VCEO Max 40 V
Operating Temperature -55°C ~ 150°C (TJ)
Series Automotive, AEC-Q101
Subcategory Transistors
Technology Si
Configuration Single
Power - Max 200mW
Product Type BJTs - Bipolar Transistors
Transistor Type NPN, PNP Complementary
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V
Current - Collector Cutoff (Max) 50nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 40V
Frequency - Transition 300MHz, 250MHz
Collector Base Voltage (VCBO) 60 V, 40 V
Product Category Bipolar Transistors - BJT
Просмотр сходства
MMDT3946Q-7R brand manufacturers: Diodes, Anli stock, MMDT3946Q-7R reference price.Diodes. MMDT3946Q-7R parameters, MMDT3946Q-7R Datasheet PDF and pin diagram description download.You can use the MMDT3946Q-7R Transistors - Bipolar (BJT) - Arrays, DSP Datesheet PDF, find MMDT3946Q-7R pin diagram and circuit diagram and usage method of function,MMDT3946Q-7R electronics tutorials.You can download from the Anli.