Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
BSS123-13-F Технические параметры
Diodes Inc. BSS123-13-F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mount | Surface Mount | |
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| RoHS | Compliant | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | 40 | |
| Rohs Code | Yes | |
| Manufacturer Part Number | BSS123-13-F | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Diodes Incorporated | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Risk Rank | 5.52 | |
| Drain Current-Max (ID) | 0.17 A | |
| Packaging | Tape and Reel |
| Свойство продукта | Значение свойства | |
|---|---|---|
| JESD-609 Code | e3 | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Max Operating Temperature | 150 °C | |
| Min Operating Temperature | -55 °C | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | R-PDSO-G3 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 300 mW | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | P-CHANNEL | |
| Continuous Drain Current (ID) | 170 mA | |
| Gate to Source Voltage (Vgs) | 20 V | |
| Drain-source On Resistance-Max | 10 Ω | |
| DS Breakdown Voltage-Min | 100 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 6 pF |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ