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DMP3056LDMQ-7 Технические параметры
Diodes Inc. DMP3056LDMQ-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Factory Lead Time | 15 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-23-6 | |
| Surface Mount | YES | |
| Number of Pins | 6Pins | |
| Supplier Device Package | SOT-26 | |
| Number of Terminals | 6Terminals | |
| Transistor Element Material | SILICON | |
| Continuous Drain Current Id | 4.3 | |
| RoHS | Compliant | |
| Turn Off Delay Time | 50.1 ns | |
| Factory Pack QuantityFactory Pack Quantity | 3000 | |
| Manufacturer | Diodes Incorporated | |
| Brand | Diodes Incorporated | |
| Package | Tape & Reel (TR) | |
| Base Product Number | DMP3056 | |
| Current - Continuous Drain (Id) @ 25℃ | 4.3A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Mfr | Diodes Incorporated | |
| Power Dissipation (Max) | 1.25W (Ta) | |
| Product Status | Active | |
| Package Description | SMALL OUTLINE, R-PDSO-G6 | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | 40 | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | DMP3056LDMQ-7 | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Risk Rank | 5.64 | |
| Drain Current-Max (ID) | 5 A | |
| Packaging | Tape & Reel | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Series | Automotive, AEC-Q101 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| JESD-609 Code | e3 | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Max Operating Temperature | 150 °C | |
| Min Operating Temperature | -55 °C | |
| Additional Feature | HIGH RELIABILITY | |
| Subcategory | MOSFETs | |
| Technology | Si | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| Pin Count | 6 | |
| JESD-30 Code | R-PDSO-G6 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 1.5 | |
| Turn On Delay Time | 10.2 ns | |
| FET Type | P-Channel | |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 5A, 10V | |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA | |
| Input Capacitance (Ciss) (Max) @ Vds | 948 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 21.1 nC @ 10 V | |
| Rise Time | 6.6 ns | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Vgs (Max) | ±20V | |
| Polarity/Channel Type | P-CHANNEL | |
| Product Type | MOSFET | |
| Continuous Drain Current (ID) | 4.3 A | |
| Gate to Source Voltage (Vgs) | 20 V | |
| Drain Current-Max (Abs) (ID) | 4.3 A | |
| Drain-source On Resistance-Max | 0.045 Ω | |
| Pulsed Drain Current-Max (IDM) | 13 A | |
| DS Breakdown Voltage-Min | 30 V | |
| Channel Type | P | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 1.25 W | |
| FET Feature | - | |
| Product Category | MOSFET | |
| Radiation Hardening | No |
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