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ZVP3306F Технические параметры
Diodes Inc. ZVP3306F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| RoHS | Compliant | |
| MSL | - | |
| Qualification | - | |
| Continuous Drain Current Id | 90mA | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | 40 | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | ZVP3306F | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Diodes Incorporated | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Risk Rank | 0.84 | |
| Drain Current-Max (ID) | 0.09 A | |
| Packaging | Cut Tape | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Max Operating Temperature | 150 °C | |
| HTS Code | 8541.21.00.95 | |
| Subcategory | Other Transistors | |
| Max Power Dissipation | 330 mW | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | R-PDSO-G3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 330 mW | |
| Transistor Application | SWITCHING | |
| Drain to Source Voltage (Vdss) | -60 V | |
| Polarity/Channel Type | P-CHANNEL | |
| Continuous Drain Current (ID) | 90 mA | |
| Threshold Voltage | -3.5 V | |
| Drain Current-Max (Abs) (ID) | 0.09 A | |
| Drain-source On Resistance-Max | 14 Ω | |
| DS Breakdown Voltage-Min | 60 V | |
| Channel Type | P Channel | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 0.33 W | |
| Drain to Source Resistance | 14 Ω | |
| Feedback Cap-Max (Crss) | 8 pF | |
| Width | 3.05 mm | |
| REACH SVHC | No SVHC |
Индекс :
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