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1N4448HWT-7-F Технические параметры

Diodes Incorporated  1N4448HWT-7-F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
ECCN (US) EAR99
HTS 8541.10.00.80
Maximum DC Reverse Voltage (V) 80
Peak Reverse Repetitive Voltage (V) 80
Maximum Continuous Forward Current (A) 0.25
Peak Non-Repetitive Surge Current (A) 2
Peak Forward Voltage (V) [email protected]
Peak Reverse Current (uA) 0.1
Maximum Power Dissipation (mW) 150
Peak Reverse Recovery Time (ns) 4
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 150
Automotive No
Свойство продукта Значение свойства
Standard Package Name SOD
Supplier Package SOD-523
Military No
Mounting Surface Mount
Package Height 0.7(Max)
Package Length 1.3(Max)
Package Width 0.9(Max)
PCB changed 2
Lead Shape Flat
Packaging Tape and Reel
Part Status Active
Type Small Signal Switching Diode
Pin Count 2
Configuration Single
RoHS Status RoHS Compliant
Просмотр сходства
1N4448HWT-7-F brand manufacturers: Diodes Incorporated, Anli stock, 1N4448HWT-7-F reference price.Diodes Incorporated. 1N4448HWT-7-F parameters, 1N4448HWT-7-F Datasheet PDF and pin diagram description download.You can use the 1N4448HWT-7-F Diodes - RF, DSP Datesheet PDF, find 1N4448HWT-7-F pin diagram and circuit diagram and usage method of function,1N4448HWT-7-F electronics tutorials.You can download from the Anli.