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1N4448WSF-7 Технические параметры

Diodes Incorporated  1N4448WSF-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка
Factory Lead Time 19 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-90, SOD-323F
Number of Pins 2Pins
Weight 4.904468mg
Diode Element Material SILICON
Number of Elements 1 Element
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Additional Feature HIGH RELIABILITY
HTS Code 8541.10.00.70
Power Rating 400mW
Max Power Dissipation 400mW
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number 1N4448W
Pin Count 2
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 2.5μA @ 75V
Voltage - Forward (Vf) (Max) @ If 1.25V @ 150mA
Forward Current 250mA
Operating Temperature - Junction -65°C~150°C
Max Surge Current 4A
Forward Voltage 1.25V
Max Reverse Voltage (DC) 75V
Average Rectified Current 250mA
Reverse Recovery Time 4 ns
Peak Reverse Current 2.5μA
Max Repetitive Reverse Voltage (Vrrm) 75V
Capacitance @ Vr, F 4pF @ 0V 1MHz
Peak Non-Repetitive Surge Current 4A
Recovery Time 4 ns
Height 1.8mm
Length 1.8mm
Width 1.35mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

1N4448WSF-7 Документы

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