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1N5399S-T Технические параметры

Diodes Incorporated  1N5399S-T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case DO-204AL, DO-41, Axial
Number of Pins 2Pins
Weight 299.994654mg
Diode Element Material SILICON
Number of Elements 1 Element
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Applications EFFICIENCY
HTS Code 8541.10.00.80
Terminal Form WIRE
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number 1N5399
Свойство продукта Значение свойства
Pin Count 2
Element Configuration Single
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 5μA @ 1000V
Voltage - Forward (Vf) (Max) @ If 1.1V @ 1.5A
Case Connection ISOLATED
Forward Current 1.5A
Operating Temperature - Junction -65°C~150°C
Max Surge Current 50A
Voltage - DC Reverse (Vr) (Max) 1000V
Forward Voltage 1.1V
Max Reverse Voltage (DC) 1kV
Average Rectified Current 1.5A
Number of Phases 1Phase
Peak Reverse Current 5μA
Max Repetitive Reverse Voltage (Vrrm) 1kV
Capacitance @ Vr, F 20pF @ 4V 1MHz
Peak Non-Repetitive Surge Current 50A
Reverse Voltage (DC) 1kV
Height 2.72mm
Length 5.21mm
Width 2.72mm
Radiation Hardening No
RoHS Status ROHS3 Compliant

1N5399S-T Документы

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