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1N5711W-13 Технические параметры

Diodes Incorporated  1N5711W-13 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
Package / Case SOD-123
Surface Mount YES
Diode Element Material SILICON
Number of Elements 1 Element
Power Dissipation (Max) 333mW
Operating Temperature -55°C~125°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish TIN LEAD
Свойство продукта Значение свойства
HTS Code 8541.10.00.70
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 235
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 2
JESD-30 Code R-PDSO-G2
Qualification Status Not Qualified
Diode Type Schottky - Single
Output Current-Max 0.015A
Capacitance @ Vr, F 2pF @ 0V 1MHz
Voltage - Peak Reverse (Max) 70V
Reverse Recovery Time-Max 0.001μs
RoHS Status Non-RoHS Compliant

1N5711W-13 Документы

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