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1N5711W-7-F Технические параметры

Diodes Incorporated  1N5711W-7-F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
Factory Lead Time 15 Weeks
Contact Plating Tin
Mount Surface Mount
Package / Case SOD-123
Number of Pins 2Pins
Weight 10.007382mg
Diode Element Material SILICON
Number of Elements 1 Element
Operating Temperature -55°C~125°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Termination SMD/SMT
ECCN Code EAR99
HTS Code 8541.10.00.70
Capacitance 2pF
Power Rating 333mW
Voltage - Rated DC 70V
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Current Rating 15mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number 1N5711
Pin Count 2
Polarity Standard
Max Current Rating 15mA
Element Configuration Single
Diode Type Schottky - Single
Power Dissipation 333mW
Output Current 15mA
Forward Current 15mA
Forward Voltage 1V
Reverse Recovery Time 1 ns
Peak Reverse Current 200nA
Max Repetitive Reverse Voltage (Vrrm) 70V
Capacitance @ Vr, F 2pF @ 0V 1MHz
Max Forward Surge Current (Ifsm) 1mA
Height 1.25mm
Length 2.85mm
Width 1.7mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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