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1N5818-T Технические параметры
Diodes Incorporated 1N5818-T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Single | |
| Марка | ||
| Factory Lead Time | 14 Weeks | |
| Contact Plating | Tin | |
| Mount | Through Hole | |
| Mounting Type | Through Hole | |
| Package / Case | DO-204AL, DO-41, Axial | |
| Number of Pins | 2Pins | |
| Weight | 299.994654mg | |
| Diode Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Packaging | Tape & Reel (TR) | |
| Published | 2006 | |
| JESD-609 Code | e3 | |
| Pbfree Code | no | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| Termination | Through Hole | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 125°C | |
| Min Operating Temperature | -65°C | |
| Additional Feature | LOW POWER LOSS, FREE WHEELING DIODE | |
| HTS Code | 8541.10.00.80 | |
| Capacitance | 110pF | |
| Voltage - Rated DC | 30V | |
| Terminal Form | WIRE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | 1A | |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Base Part Number | 1N5818 | |
| Pin Count | 2 | |
| Polarity | Standard | |
| Element Configuration | Single | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Diode Type | Schottky | |
| Current - Reverse Leakage @ Vr | 1mA @ 30V | |
| Output Current | 1A | |
| Voltage - Forward (Vf) (Max) @ If | 550mV @ 1A | |
| Case Connection | ISOLATED | |
| Forward Current | 1A | |
| Operating Temperature - Junction | -65°C~125°C | |
| Forward Voltage | 875mV | |
| Max Reverse Voltage (DC) | 30V | |
| Average Rectified Current | 1A | |
| Peak Reverse Current | 1mA | |
| Max Repetitive Reverse Voltage (Vrrm) | 30V | |
| Capacitance @ Vr, F | 110pF @ 4V 1MHz | |
| Peak Non-Repetitive Surge Current | 25A | |
| Reverse Voltage | 30V | |
| Max Forward Surge Current (Ifsm) | 25A | |
| Max Junction Temperature (Tj) | 125°C | |
| Diameter | 2.72mm | |
| Height | 2.72mm | |
| Length | 4.7mm | |
| Width | 2.71mm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
1N5818-T Документы
- Datasheets1N5817-19 Datasheet
- Environmental InformationDiodes RoHS 3 Cert
- PCN Assembly/OriginMult Devices Rev 21/Apr/2017
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