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1N5819HW1-7-F Технические параметры

Diodes Incorporated  1N5819HW1-7-F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOD-123F
Diode Element Material SILICON
Manufacturer Package Identifier SOD123F (Type B)
Number of Elements 1 Element
Packaging Tape & Reel (TR)
Series SBR®
Published 2015
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Operating Temperature 125°C
Min Operating Temperature -55°C
Capacitance 30pF
Terminal Position DUAL
Terminal Form FLAT
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-F2
Configuration SINGLE
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Super Barrier
Current - Reverse Leakage @ Vr 500μA @ 40V
Voltage - Forward (Vf) (Max) @ If 510mV @ 1A
Forward Current 1A
Operating Temperature - Junction -55°C~125°C
Output Current-Max 1A
Max Reverse Voltage (DC) 40V
Average Rectified Current 1A
Reverse Recovery Time 15 ns
Peak Reverse Current 500μA
Max Repetitive Reverse Voltage (Vrrm) 40V
Capacitance @ Vr, F 30pF @ 10V 1MHz
Reverse Voltage 40V
Max Forward Surge Current (Ifsm) 30A
Max Junction Temperature (Tj) 125°C
Height 1.15mm
RoHS Status ROHS3 Compliant

1N5819HW1-7-F Документы

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