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AS358AP-E1 Технические параметры

Diodes Incorporated  AS358AP-E1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps
Марка
Factory Lead Time 18 Weeks
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case 8-DIP (0.300, 7.62mm)
Supplier Device Package 8-DIP
Usage Level Industrial grade
Operating Temperature -40°C~85°C
Packaging Tube
Published 2006
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 85°C
Min Operating Temperature -40°C
Max Power Dissipation 830mW
Свойство продукта Значение свойства
Number of Circuits 2Circuits
Max Supply Voltage 36V
Min Supply Voltage 3V
Operating Supply Current 700μA
Current - Supply 700μA
Amplifier Type General Purpose
Common Mode Rejection Ratio 60 dB
Current - Input Bias 20nA
Voltage - Supply, Single/Dual (±) 3V~36V ±1.5V~18V
Output Current per Channel 40mA
Input Offset Voltage (Vos) 2mV
Voltage Gain 100dB
Power Supply Rejection Ratio (PSRR) 70dB
Voltage - Input Offset 2mV
Max Dual Supply Voltage 18V
Min Dual Supply Voltage 1.5V
RoHS Status ROHS3 Compliant
AS358AP-E1 brand manufacturers: Diodes Incorporated, Anli stock, AS358AP-E1 reference price.Diodes Incorporated. AS358AP-E1 parameters, AS358AP-E1 Datasheet PDF and pin diagram description download.You can use the AS358AP-E1 Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps, DSP Datesheet PDF, find AS358AP-E1 pin diagram and circuit diagram and usage method of function,AS358AP-E1 electronics tutorials.You can download from the Anli.