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B2100AE-13 Технические параметры
Diodes Incorporated B2100AE-13 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Single | |
| Марка | ||
| Factory Lead Time | 19 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | DO-214AC, SMA | |
| Surface Mount | YES | |
| Diode Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Operating Temperature (Max.) | 150°C | |
| Packaging | Tape & Reel (TR) | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Applications | EFFICIENCY | |
| Additional Feature | FREE WHEELING DIODE, LOW POWER LOSS | |
| HTS Code | 8541.10.00.80 | |
| Terminal Position | DUAL |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Form | C BEND | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | not_compliant | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| JESD-30 Code | R-PDSO-C2 | |
| Configuration | SINGLE | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Diode Type | Schottky | |
| Current - Reverse Leakage @ Vr | 7μA @ 100V | |
| Voltage - Forward (Vf) (Max) @ If | 790mV @ 2A | |
| Operating Temperature - Junction | -65°C~150°C | |
| Output Current-Max | 2A | |
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Current - Average Rectified (Io) | 2A | |
| Number of Phases | 1Phase | |
| Rep Pk Reverse Voltage-Max | 100V | |
| Capacitance @ Vr, F | 70pF @ 4V 1MHz | |
| Non-rep Pk Forward Current-Max | 50A | |
| Reverse Current-Max | 7μA | |
| RoHS Status | ROHS3 Compliant |
B2100AE-13 Документы
- DatasheetsB270(A,B)E - B2100(A,B)E
- Environmental InformationDiodes RoHS 3 Cert
- PCN Assembly/OriginMult Devices Assembly 21/May/2019
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