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B2100AF-13 Технические параметры

Diodes Incorporated  B2100AF-13 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка
Factory Lead Time 19 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DO-221AC, SMA Flat Leads
Number of Pins 2Pins
Diode Element Material SILICON
Number of Elements 1 Element
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Applications EFFICIENCY
Свойство продукта Значение свойства
HTS Code 8541.10.00.80
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 10μA @ 100V
Voltage - Forward (Vf) (Max) @ If 790mV @ 2A
Forward Current 2A
Operating Temperature - Junction -55°C~150°C
Output Current-Max 2A
Max Reverse Voltage (DC) 100V
Average Rectified Current 2A
Number of Phases 1Phase
Peak Reverse Current 10μA
Max Repetitive Reverse Voltage (Vrrm) 100V
Peak Non-Repetitive Surge Current 75A
RoHS Status ROHS3 Compliant

B2100AF-13 Документы

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