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BAS116LP3-7 Технические параметры

Diodes Incorporated  BAS116LP3-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка
Factory Lead Time 19 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 0201 (0603 Metric)
Number of Pins 2Pins
Diode Element Material SILICON
Number of Elements 1 Element
Packaging Tape & Reel (TR)
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -65°C
HTS Code 8541.10.00.70
Power Rating 250mW
Max Power Dissipation 250mW
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Свойство продукта Значение свойства
Base Part Number BAS116
Pin Count 2
Element Configuration Single
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 10nA @ 75V
Voltage - Forward (Vf) (Max) @ If 1.35V @ 150mA
Forward Current 215mA
Operating Temperature - Junction -65°C~150°C
Max Surge Current 4A
Current - Average Rectified (Io) 215mA DC
Forward Voltage 1.15V
Max Reverse Voltage (DC) 85V
Average Rectified Current 215mA
Reverse Recovery Time 3 μs
Peak Reverse Current 500nA
Max Repetitive Reverse Voltage (Vrrm) 85V
Capacitance @ Vr, F 3pF @ 0V 1MHz
Peak Non-Repetitive Surge Current 4A
Recovery Time 120 ns
Height 645μm
Length 650μm
Width 345μm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BAS116LP3-7 Документы

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