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BAS116LPH4-7B Технические параметры

Diodes Incorporated  BAS116LPH4-7B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка
Factory Lead Time 19 Weeks
Contact Plating Gold
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 0402 (1006 Metric)
Number of Pins 2Pins
Diode Element Material SILICON
Number of Elements 1 Element
Packaging Tape & Reel (TR)
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
HTS Code 8541.10.00.70
Power Rating 200mW
Max Power Dissipation 300mW
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BAS116
Свойство продукта Значение свойства
Pin Count 2
Element Configuration Single
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 5nA @ 75V
Power Dissipation 300mW
Voltage - Forward (Vf) (Max) @ If 1.25V @ 150mA
Forward Current 215mA
Operating Temperature - Junction -55°C~150°C
Max Surge Current 4A
Current - Average Rectified (Io) 215mA DC
Forward Voltage 1.25V
Max Reverse Voltage (DC) 85V
Average Rectified Current 215mA
Reverse Recovery Time 3 μs
Peak Reverse Current 80nA
Max Repetitive Reverse Voltage (Vrrm) 85V
Capacitance @ Vr, F 1.5pF @ 0V 1MHz
Peak Non-Repetitive Surge Current 4A
Recovery Time 3 μs
Height 1.075mm
Length 1.08mm
Width 675μm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BAS116LPH4-7B Документы

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