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BAS40-05Q-13-F Технические параметры

Diodes Incorporated  BAS40-05Q-13-F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
ECCN (US) EAR99
HTS 8541.10.00.80
Maximum DC Reverse Voltage (V) 40
Peak Reverse Repetitive Voltage (V) 40
Maximum Continuous Forward Current (A) 0.2
Peak Non-Repetitive Surge Current (A) 0.6
Peak Forward Voltage (V) [email protected]
Peak Reverse Current (uA) 0.2@30V
Maximum Junction Ambient Thermal Resistance 357°C/W
Maximum Diode Capacitance (pF) 5
Maximum Power Dissipation (mW) 350
Peak Reverse Recovery Time (ns) 5
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 125
Supplier Temperature Grade Automotive
AEC Qualified Number AEC-Q101
Standard Package Name SOT-23
Supplier Package SOT-23
Military No
Mounting Surface Mount
Свойство продукта Значение свойства
Package Height 0.98
Package Length 2.9
Package Width 1.3
PCB changed 3
Lead Shape Gull-wing
Packaging Tape and Reel
Part Status Active
Type Schottky Diode
Max Operating Temperature 125 °C
Min Operating Temperature -55 °C
Capacitance 4 pF
Pin Count 3
Configuration Dual Common Cathode
Forward Current 200 mA
Peak Reverse Current 20 nA
Max Repetitive Reverse Voltage (Vrrm) 40 V
Reverse Voltage 40 V
Max Forward Surge Current (Ifsm) 600 mA
Max Junction Temperature (Tj) 125 °C
Height 1.1 mm
RoHS Status RoHS Compliant

BAS40-05Q-13-F Документы

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