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BAV199T-7-F Технические параметры

Diodes Incorporated  BAV199T-7-F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Arrays
Марка
Factory Lead Time 19 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-523
Number of Pins 2Pins
Weight 2.012816mg
Diode Element Material SILICON
Number of Elements 2 Elements
Packaging Tape & Reel (TR)
Published 1999
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Additional Feature HIGH RELIABILITY
HTS Code 8541.10.00.70
Capacitance 2pF
Power Rating 150mW
Voltage - Rated DC 85V
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 215mA
Time@Peak Reflow Temperature-Max (s) 30
Свойство продукта Значение свойства
Base Part Number BAV199T
Pin Count 3
JESD-30 Code R-PDSO-G3
Speed Small Signal =< 200mA (Io), Any Speed
Diode Type Standard
Current - Reverse Leakage @ Vr 5nA @ 75V
Power Dissipation 150mW
Voltage - Forward (Vf) (Max) @ If 1.1V @ 50mA
Forward Current 125mA
Operating Temperature - Junction -65°C~150°C
Max Surge Current 4A
Current - Average Rectified (Io) 125mA DC
Forward Voltage 1.25V
Max Reverse Voltage (DC) 85V
Average Rectified Current 125mA
Reverse Recovery Time 3 μs
Peak Reverse Current 5nA
Max Repetitive Reverse Voltage (Vrrm) 85V
Peak Non-Repetitive Surge Current 4A
Reverse Voltage 85V
Diode Configuration 1 Pair Series Connection
Max Forward Surge Current (Ifsm) 500mA
Recovery Time 3 μs
Max Junction Temperature (Tj) 150°C
Reverse Voltage (DC) 85V
Height 900μm
Length 1.6mm
Width 800μm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BAV199T-7-F Документы

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