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BC856BW-7-F Технические параметры

Diodes Incorporated  BC856BW-7-F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Factory Lead Time 19 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3Pins
Supplier Device Package SOT-323
Weight 6.010099mg
Collector-Emitter Breakdown Voltage 65V
Current-Collector (Ic) (Max) 100mA
Number of Elements 1 Element
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Voltage - Rated DC -65V
Max Power Dissipation 200mW
Current Rating -100mA
Frequency 200MHz
Base Part Number BC856BW
Свойство продукта Значение свойства
Polarity PNP
Element Configuration Single
Power Dissipation 200mW
Power - Max 200mW
Gain Bandwidth Product 200MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 65V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 65V
Max Frequency 200MHz
Max Breakdown Voltage 65V
Frequency - Transition 200MHz
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
Height 1mm
Length 2.2mm
Width 1.35mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BC856BW-7-F Документы

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