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BC857AT-7-F Технические параметры

Diodes Incorporated  BC857AT-7-F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Factory Lead Time 18 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-523
Number of Pins 3Pins
Weight 2.012816mg
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 45V
Number of Elements 1 Element
hFEMin 125
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Voltage - Rated DC -50V
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Reach Compliance Code not_compliant
Current Rating -100mA
Frequency 100MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BC857AT
Pin Count 3
Qualification Status Not Qualified
Element Configuration Single
Power Dissipation 150mW
Gain Bandwidth Product 100MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Transition Frequency 100MHz
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
Height 750μm
Length 1.6mm
Width 800μm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

BC857AT-7-F Документы

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