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BC857BWQ-13-F Технические параметры
Diodes Incorporated BC857BWQ-13-F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Factory Lead Time | 19 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-70, SOT-323 | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 50mA | |
| Number of Elements | 1 Element | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | Automotive, AEC-Q101 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Additional Feature | HIGH RELIABILITY | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| JESD-30 Code | R-PDSO-G3 | |
| Configuration | SINGLE | |
| Power - Max | 200mW | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | PNP | |
| Transistor Type | PNP | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 2mA 6V | |
| Current - Collector Cutoff (Max) | 500nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA | |
| Voltage - Collector Emitter Breakdown (Max) | 120V | |
| Transition Frequency | 200MHz | |
| Frequency - Transition | 140MHz | |
| RoHS Status | ROHS3 Compliant |
Индекс :
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