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BS107PSTOB Технические параметры

Diodes Incorporated  BS107PSTOB technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3
Weight 453.59237mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 120mA Ta
Drive Voltage (Max Rds On, Min Rds On) 2.6V 5V
Number of Elements 1 Element
Power Dissipation (Max) 500mW Ta
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 200V
Terminal Form WIRE
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Current Rating 120mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code R-PSIP-W3
Qualification Status Not Qualified
Number of Channels 1Channel
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 500mW
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30 Ω @ 100mA, 5V
Vgs (Max) ±20V
Continuous Drain Current (ID) 120mA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 23Ohm
Drain to Source Breakdown Voltage 200V
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free

BS107PSTOB Документы

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