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BSS123Q-13 Технические параметры
Diodes Incorporated BSS123Q-13 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Factory Lead Time | 14 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Surface Mount | YES | |
| Supplier Device Package | SOT-23-3 | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Mfr | Diodes Incorporated | |
| Package | Tape & Reel (TR) | |
| Product Status | Active | |
| Current - Continuous Drain (Id) @ 25℃ | 170mA (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Power Dissipation (Max) | 300mW (Ta) | |
| Continuous Drain Current Id | 170 | |
| Qualification | AEC-Q101 | |
| Vds - Drain-Source Breakdown Voltage | 100 V | |
| Vgs th - Gate-Source Threshold Voltage | 2 V | |
| Pd - Power Dissipation | 300 mW | |
| Transistor Polarity | N-Channel | |
| Maximum Operating Temperature | + 150 C | |
| Vgs - Gate-Source Voltage | - 20 V, + 20 V | |
| Minimum Operating Temperature | - 55 C | |
| Factory Pack QuantityFactory Pack Quantity | 10000 | |
| Mounting Styles | SMD/SMT | |
| Channel Mode | Enhancement | |
| Manufacturer | Diodes Incorporated | |
| Brand | Diodes Incorporated | |
| Qg - Gate Charge | - | |
| Rds On - Drain-Source Resistance | 6 Ohms | |
| RoHS | Details | |
| Id - Continuous Drain Current | 170 mA | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | 40 | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | BSS123Q-13 | |
| Package Shape | RECTANGULAR |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Risk Rank | 1.51 | |
| Drain Current-Max (ID) | 0.17 A | |
| Series | Automotive, AEC-Q101 | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Packaging | MouseReel | |
| JESD-609 Code | e3 | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Additional Feature | HIGH RELIABILITY | |
| Subcategory | MOSFETs | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| Reference Standard | AEC-Q101 | |
| JESD-30 Code | R-PDSO-G3 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Number of Channels | 1 ChannelChannel | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 300 | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 170mA, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 60 pF @ 25 V | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Vgs (Max) | ±20V | |
| Polarity/Channel Type | N-CHANNEL | |
| Product Type | MOSFET | |
| Drain Current-Max (Abs) (ID) | 0.17 A | |
| Drain-source On Resistance-Max | 10 Ω | |
| DS Breakdown Voltage-Min | 100 V | |
| Channel Type | N Channel | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 0.3 W | |
| FET Feature | - | |
| Feedback Cap-Max (Crss) | 6 pF | |
| Product Category | MOSFET |
Индекс :
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