Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
BSS84DW-7-F Технические параметры
Diodes Incorporated BSS84DW-7-F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Factory Lead Time | 15 Weeks | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Number of Pins | 6Pins | |
| Weight | 6.010099mg | |
| Transistor Element Material | SILICON | |
| Number of Elements | 2 Elements | |
| Turn Off Delay Time | 18 ns | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2007 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| Termination | SMD/SMT | |
| ECCN Code | EAR99 | |
| Resistance | 10Ohm | |
| Voltage - Rated DC | -50V | |
| Max Power Dissipation | 300mW | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Current Rating | -130mA | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Base Part Number | BSS84DW |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pin Count | 6 | |
| Number of Channels | 2Channels | |
| Element Configuration | Dual | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 300mW | |
| Turn On Delay Time | 10 ns | |
| FET Type | 2 P-Channel (Dual) | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 10 Ω @ 100mA, 5V | |
| Vgs(th) (Max) @ Id | 2V @ 1mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 45pF @ 25V | |
| Drain to Source Voltage (Vdss) | 50V | |
| Continuous Drain Current (ID) | 130mA | |
| Threshold Voltage | -1.6V | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain Current-Max (Abs) (ID) | 0.13A | |
| Drain to Source Breakdown Voltage | -50V | |
| Dual Supply Voltage | -50V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | Logic Level Gate | |
| Nominal Vgs | -1.6 V | |
| Min Breakdown Voltage | 50V | |
| Height | 1mm | |
| Length | 2.2mm | |
| Width | 1.35mm | |
| REACH SVHC | No SVHC | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ