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CTA2P1N-7 Технические параметры
Diodes Incorporated CTA2P1N-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ||
| Mount | Surface Mount | |
| Package / Case | SOT-363 | |
| Weight | 6.010099mg | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Operating Temperature (Max.) | 150°C | |
| Voltage Rated | 60V | |
| Packaging | Tape & Reel (TR) | |
| Published | 2007 | |
| JESD-609 Code | e0 | |
| Part Status | Discontinued | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Lead (Sn85Pb15) | |
| Voltage - Rated DC | -40V | |
| Max Power Dissipation | 150mW | |
| Terminal Position | DUAL |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 235 | |
| Reach Compliance Code | not_compliant | |
| Current Rating | 115mA | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Pin Count | 6 | |
| JESD-30 Code | R-PDSO-G6 | |
| Qualification Status | Not Qualified | |
| Rise Time-Max | 20ns | |
| Configuration | SINGLE WITH BUILT-IN FET | |
| Polarity/Channel Type | PNP | |
| Transition Frequency | 200MHz | |
| Collector Current-Max (IC) | 0.6A | |
| DC Current Gain-Min (hFE) | 20 | |
| VCEsat-Max | 0.75 V | |
| Turn Off Time-Max (toff) | 255ns | |
| Turn On Time-Max (ton) | 35ns | |
| Fall Time-Max (tf) | 30ns | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Contains Lead |
CTA2P1N-7 Документы
- PCN Design/SpecificationGreen Encapsulate Change 09/July/2007
- DatasheetsCTA2P1N
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