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DDA114TU-7 Технические параметры

Diodes Incorporated  DDA114TU-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Марка
Mount Surface Mount
Package / Case SOT-363
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 50V
Number of Elements 2 Elements
hFEMin 100
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e0
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn85Pb15)
Additional Feature BUILT-IN BIAS RESISTOR
HTS Code 8541.21.00.75
Voltage - Rated DC -50V
Свойство продукта Значение свойства
Max Power Dissipation 200mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 235
Reach Compliance Code not_compliant
Current Rating -100mA
Time@Peak Reflow Temperature-Max (s) 10
Pin Count 6
JESD-30 Code R-PDSO-G6
Qualification Status Not Qualified
Polarity PNP
Element Configuration Dual
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
Transition Frequency 250MHz
Max Breakdown Voltage 50V
DC Current Gain-Min (hFE) 100
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
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DDA114TU-7 Документы

DDA114TU-7 brand manufacturers: Diodes Incorporated, Anli stock, DDA114TU-7 reference price.Diodes Incorporated. DDA114TU-7 parameters, DDA114TU-7 Datasheet PDF and pin diagram description download.You can use the DDA114TU-7 Transistors - Bipolar (BJT) - Arrays, Pre-Biased, DSP Datesheet PDF, find DDA114TU-7 pin diagram and circuit diagram and usage method of function,DDA114TU-7 electronics tutorials.You can download from the Anli.