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DDC114EU-7 Технические параметры

Diodes Incorporated  DDC114EU-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Марка
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6Pins
Collector-Emitter Breakdown Voltage 50V
Number of Elements 2 Elements
hFEMin 100
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e0
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn85Pb15)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTANCE RATIO IS 1
HTS Code 8541.21.00.75
Voltage - Rated DC 50V
Max Power Dissipation 200mW
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 235
Reach Compliance Code not_compliant
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number DDC114
Pin Count 6
Qualification Status Not Qualified
Polarity NPN
Element Configuration Dual
Power Dissipation 200mW
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Transition Frequency 250MHz
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Emitter Base Voltage (VEBO) 5V
Resistor - Base (R1) 10k Ω
Resistor - Emitter Base (R2) 10k Ω
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

DDC114EU-7 Документы

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