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DDC114TU-7-F Технические параметры

Diodes Incorporated  DDC114TU-7-F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Марка
Factory Lead Time 19 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Number of Pins 6Pins
Weight 6.010099mg
Collector-Emitter Breakdown Voltage 50V
Number of Elements 2 Elements
hFEMin 100
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT IN BIAS RESISTOR
HTS Code 8541.21.00.75
Voltage - Rated DC 50V
Max Power Dissipation 200mW
Свойство продукта Значение свойства
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number DDC114
Pin Count 6
Qualification Status Not Qualified
Polarity NPN, PNP
Element Configuration Dual
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 100μA, 1mA
Transition Frequency 250MHz
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Emitter Base Voltage (VEBO) 5V
Resistor - Base (R1) 10k Ω
Continuous Collector Current 100mA
Height 1mm
Length 2.2mm
Width 1.35mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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