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DDTC113TE-7-F Технические параметры

Diodes Incorporated  DDTC113TE-7-F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка
Factory Lead Time 19 Weeks
Mounting Type Surface Mount
Package / Case SOT-523
Surface Mount YES
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 100mA
Number of Elements 1 Element
Operating Temperature (Max.) 150°C
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature BUILT-IN BIAS RESISTOR
HTS Code 8541.21.00.75
Свойство продукта Значение свойства
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number DDTC113
Pin Count 3
JESD-30 Code R-PDSO-G3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN RESISTOR
Power - Max 150mW
Polarity/Channel Type NPN
Transistor Type NPN - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA 5V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Transition Frequency 250MHz
Frequency - Transition 250MHz
Power Dissipation-Max (Abs) 0.15W
Resistor - Base (R1) 1 k Ω
RoHS Status ROHS3 Compliant
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DDTC113TE-7-F Документы

DDTC113TE-7-F brand manufacturers: Diodes Incorporated, Anli stock, DDTC113TE-7-F reference price.Diodes Incorporated. DDTC113TE-7-F parameters, DDTC113TE-7-F Datasheet PDF and pin diagram description download.You can use the DDTC113TE-7-F Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find DDTC113TE-7-F pin diagram and circuit diagram and usage method of function,DDTC113TE-7-F electronics tutorials.You can download from the Anli.