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DDTC114WE-7-F Технические параметры

Diodes Incorporated  DDTC114WE-7-F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка
Factory Lead Time 17 Weeks
Mount Surface Mount
Package / Case SOT-523
Number of Pins 3Pins
Weight 2.012816mg
Collector-Emitter Breakdown Voltage 50V
hFEMin 24
Packaging Tape & Reel (TR)
Published 2007
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Свойство продукта Значение свойства
Voltage - Rated DC 50V
Max Power Dissipation 150mW
Current Rating 100mA
Polarity NPN
Element Configuration Single
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
Transition Frequency 250MHz
Max Breakdown Voltage 50V
Continuous Collector Current 100mA
Height 750μm
Length 1.6mm
Width 800μm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Просмотр сходства

DDTC114WE-7-F Документы

DDTC114WE-7-F brand manufacturers: Diodes Incorporated, Anli stock, DDTC114WE-7-F reference price.Diodes Incorporated. DDTC114WE-7-F parameters, DDTC114WE-7-F Datasheet PDF and pin diagram description download.You can use the DDTC114WE-7-F Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find DDTC114WE-7-F pin diagram and circuit diagram and usage method of function,DDTC114WE-7-F electronics tutorials.You can download from the Anli.