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- Transistors - Bipolar (BJT) - Single, Pre-Biased
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- DDTC115GE-7
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DDTC115GE-7 Технические параметры
Diodes Incorporated DDTC115GE-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single, Pre-Biased | |
| Марка | ||
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-523 | |
| Number of Pins | 3Pins | |
| Weight | 2.012816mg | |
| Collector-Emitter Breakdown Voltage | 50V | |
| Number of Elements | 1 Element | |
| hFEMin | 82 | |
| Packaging | Tape & Reel (TR) | |
| Published | 2007 | |
| JESD-609 Code | e0 | |
| Part Status | Discontinued | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Lead (Sn85Pb15) | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Additional Feature | BUILT-IN BIAS RESISTOR | |
| HTS Code | 8541.21.00.75 | |
| Voltage - Rated DC | 50V | |
| Max Power Dissipation | 150mW | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Peak Reflow Temperature (Cel) | 235 | |
| Reach Compliance Code | not_compliant | |
| Current Rating | 100mA | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Base Part Number | DDTC115 | |
| Pin Count | 3 | |
| Qualification Status | Not Qualified | |
| Polarity | NPN | |
| Element Configuration | Single | |
| Transistor Type | NPN - Pre-Biased | |
| Collector Emitter Voltage (VCEO) | 50V | |
| Max Collector Current | 100mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 5mA 5V | |
| Current - Collector Cutoff (Max) | 500nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500μA, 10mA | |
| Transition Frequency | 250MHz | |
| Max Breakdown Voltage | 50V | |
| Frequency - Transition | 250MHz | |
| Continuous Collector Current | 100mA | |
| Resistor - Emitter Base (R2) | 100 k Ω | |
| Height | 750μm | |
| Length | 1.6mm | |
| Width | 800μm | |
| RoHS Status | Non-RoHS Compliant | |
| Lead Free | Contains Lead |
DDTC115GE-7 Документы
- PCN Design/SpecificationGreen Encapsulate Change 09/July/2007
- DatasheetsDDTC1x4GE, DDTC115GE DDTC115GE-7-Diodes-Inc.-datasheet-87430.pdf DDTC115GE-7-Diodes-Inc.-datasheet-11806943.pdf
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