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DDTC123EE-7 Технические параметры

Diodes Incorporated  DDTC123EE-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-523
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 50V
Number of Elements 1 Element
hFEMin 20
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e0
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn85Pb15)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
HTS Code 8541.21.00.75
Voltage - Rated DC 50V
Max Power Dissipation 150mW
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 235
Reach Compliance Code not_compliant
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) 10
Base Part Number DDTC123
Pin Count 3
Qualification Status Not Qualified
Polarity NPN
Element Configuration Single
Power Dissipation 150mW
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 20mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Transition Frequency 250MHz
Max Breakdown Voltage 50V
Frequency - Transition 250MHz
Emitter Base Voltage (VEBO) 5V
Resistor - Base (R1) 2.2 k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 2.2 k Ω
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

DDTC123EE-7 Документы

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