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DGTD65T40S2PT Технические параметры
Diodes Incorporated DGTD65T40S2PT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Factory Lead Time | 22 Weeks | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Current-Collector (Ic) (Max) | 80A | |
| Test Conditions | 400V, 40A, 10 Ω, 15V | |
| Operating Temperature | -40°C~175°C TJ | |
| Packaging | Tube | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Terminal Finish | Matte Tin (Sn) | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Reach Compliance Code | not_compliant | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Input Type | Standard | |
| Power - Max | 230W | |
| Reverse Recovery Time | 60ns | |
| Voltage - Collector Emitter Breakdown (Max) | 650V | |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 40A | |
| IGBT Type | Field Stop | |
| Gate Charge | 60nC | |
| Current - Collector Pulsed (Icm) | 120A | |
| Td (on/off) @ 25°C | 6ns/55ns | |
| Switching Energy | 500μJ (on), 400μJ (off) | |
| RoHS Status | ROHS3 Compliant |
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