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DMC3021LK4-13 Технические параметры

Diodes Incorporated  DMC3021LK4-13 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-5, DPak (4 Leads + Tab), TO-252AD
Number of Pins 5Pins
Weight 3.949996g
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 9.4A 6.8A
Number of Elements 2 Elements
Turn Off Delay Time 19 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Max Power Dissipation 2.7W
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number DMC3021
Pin Count 4
JESD-30 Code R-PSSO-G4
Number of Channels 2Channels
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 2.5 ns
FET Type N and P-Channel, Common Drain
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 21m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 751pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 17.4nC @ 10V
Rise Time 6.6ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 6.3 ns
Continuous Drain Current (ID) 6.8A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 6.7A
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 40A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant

DMC3021LK4-13 Документы

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