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DMC3028LSDX-13 Технические параметры

Diodes Incorporated  DMC3028LSDX-13 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 23 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Weight 73.992255mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 5.5A 5.8A
Number of Elements 2 Elements
Turn Off Delay Time 60.5 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Max Power Dissipation 1.2W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Свойство продукта Значение свойства
Reference Standard AEC-Q101
Number of Channels 2Channels
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 9.7 ns
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 27m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 641pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 13.2nC @ 10V
Rise Time 17.1ns
Drain to Source Voltage (Vdss) 30V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 40.4 ns
Continuous Drain Current (ID) 5.8A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 5.5A
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.5mm
Length 4.95mm
Width 3.95mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant

DMC3028LSDX-13 Документы

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