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Diodes Incorporated DMC3400SDW-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Factory Lead Time | 15 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Transistor Element Material | SILICON | |
| Current - Continuous Drain (Id) @ 25℃ | 650mA 450mA | |
| Number of Elements | 2 Elements | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2015 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Max Power Dissipation | 310mW | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| JESD-30 Code | R-PDSO-G6 | |
| Number of Channels | 2Channels | |
| Operating Mode | ENHANCEMENT MODE | |
| Power Dissipation | 310mW | |
| FET Type | N and P-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 400m Ω @ 590mA, 10V | |
| Vgs(th) (Max) @ Id | 1.6V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 55pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 1.4nC @ 10V | |
| Drain to Source Voltage (Vdss) | 30V | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Continuous Drain Current (ID) | 450mA | |
| Gate to Source Voltage (Vgs) | 20V | |
| Drain Current-Max (Abs) (ID) | 0.65A | |
| Drain-source On Resistance-Max | 0.4Ohm | |
| DS Breakdown Voltage-Min | 30V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Max Junction Temperature (Tj) | 150°C | |
| FET Feature | Standard | |
| Height | 1.1mm | |
| RoHS Status | ROHS3 Compliant |