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DMC6040SSD-13 Технические параметры

Diodes Incorporated  DMC6040SSD-13 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 23 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8Pins
Weight 73.992255mg
Transistor Element Material SILICON
Current - Continuous Drain (Id) @ 25℃ 5.1A 3.1A
Number of Elements 2 Elements
Turn Off Delay Time 58.7 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8Terminations
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Max Power Dissipation 1.24W
Terminal Position DUAL
Terminal Form GULL WING
Свойство продукта Значение свойства
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Reference Standard AEC-Q101
Number of Channels 2Channels
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 3.7 ns
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1130pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 20.8nC @ 10V
Rise Time 6.3ns
Drain to Source Voltage (Vdss) 60V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 26.1 ns
Continuous Drain Current (ID) 3.1A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 5.1A
Drain-source On Resistance-Max 0.04Ohm
Drain to Source Breakdown Voltage -60V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
RoHS Status ROHS3 Compliant

DMC6040SSD-13 Документы

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