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DMG1012UWQ-7 Технические параметры

Diodes Incorporated  DMG1012UWQ-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363
Mfr Diodes Incorporated
Package Tape & Reel (TR)
Product Status Active
Current - Continuous Drain (Id) @ 25℃ 950mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Power Dissipation (Max) 460mW
Package Type SOT-323
Channel Mode Enhancement
Vds - Drain-Source Breakdown Voltage 25 V
Vgs th - Gate-Source Threshold Voltage 1 V
Pd - Power Dissipation 460 mW
Transistor Polarity N-Channel
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Voltage - 6 V, + 6 V
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 3000
Mounting Styles SMD/SMT
Manufacturer Diodes Incorporated
Свойство продукта Значение свойства
Brand Diodes Incorporated
Qg - Gate Charge 1 nC
Rds On - Drain-Source Resistance 450 mOhms
RoHS Details
Id - Continuous Drain Current 950 mA
Series Automotive, AEC-Q101
Operating Temperature -55°C ~ 150°C (TJ)
Packaging MouseReel
Subcategory MOSFETs
Pin Count 3
Number of Channels 1 ChannelChannel
FET Type N-Channel
Rds On (Max) @ Id, Vgs 450mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 43 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs 1 nC @ 4.5 V
Drain to Source Voltage (Vdss) 20 V
Vgs (Max) ±6V
Product Type MOSFET
Channel Type N
FET Feature -
Product MOSFET
Product Category MOSFET
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