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DMG1013UWQ-7 Технические параметры
Diodes Incorporated DMG1013UWQ-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Factory Lead Time | 14 Weeks | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-70, SOT-323 | |
| Current - Continuous Drain (Id) @ 25℃ | 820mA Ta | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V 4.5V | |
| Power Dissipation (Max) | 310mW Ta | |
| Operating Temperature | -55°C~150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Series | Automotive, AEC-Q101 | |
| Published | 2016 | |
| JESD-609 Code | e3 | |
| Part Status | Active |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| ECCN Code | EAR99 | |
| Terminal Finish | Matte Tin (Sn) | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| FET Type | P-Channel | |
| Rds On (Max) @ Id, Vgs | 750m Ω @ 430mA, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 59.76pF @ 16V | |
| Gate Charge (Qg) (Max) @ Vgs | 0.62nC @ 4.5V | |
| Drain to Source Voltage (Vdss) | 20V | |
| Vgs (Max) | ±6V | |
| Continuous Drain Current (ID) | 820mA | |
| RoHS Status | ROHS3 Compliant |
DMG1013UWQ-7 Документы
- DatasheetsDMG1013UWQ
- Environmental InformationDiodes RoHS 3 Cert
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