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DMG1016VQ-7 Технические параметры

Diodes Incorporated  DMG1016VQ-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Current - Continuous Drain (Id) @ 25℃ 870mA 640mA
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Power Dissipation 530mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Свойство продукта Значение свойства
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 2Channels
Power Dissipation 530mW
Turn On Delay Time 5.1 ns
FET Type N and P-Channel
Rds On (Max) @ Id, Vgs 400m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 60.67pF @ 16V
Gate Charge (Qg) (Max) @ Vgs 0.74nC @ 4.5V
Drain to Source Voltage (Vdss) 20V
Continuous Drain Current (ID) 640mA
Gate to Source Voltage (Vgs) 6V
Max Junction Temperature (Tj) 150°C
FET Feature Logic Level Gate
Height 600μm
RoHS Status ROHS3 Compliant

DMG1016VQ-7 Документы

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