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DMG1023UV-7 Технические параметры

Diodes Incorporated  DMG1023UV-7 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6Pins
Weight 3.005049mg
Transistor Element Material SILICON
Number of Elements 2 Elements
Turn Off Delay Time 28.4 ns
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Resistance 750mOhm
Terminal Finish Matte Tin (Sn)
Additional Feature ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD
Max Power Dissipation 530mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Base Part Number DMG1023UV
Свойство продукта Значение свойства
Pin Count 6
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 530mW
Turn On Delay Time 5.1 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 750m Ω @ 430mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 59.76pF @ 16V
Gate Charge (Qg) (Max) @ Vgs 0.62nC @ 4.5V
Rise Time 8.1ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 20.7 ns
Continuous Drain Current (ID) 1.03A
Threshold Voltage -1V
Gate to Source Voltage (Vgs) 6V
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 600μm
Length 1.7mm
Width 1.25mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

DMG1023UV-7 Документы

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